西安交通大学   电子科学与技术      学士

香港科技大学   电子及计算机工程    博士

麦吉尔大学     物理系          访问学者

香港科技大学   电子及计算机工程    研究助理教授 (至2017.12)

深圳大学      电子科学与技术     副教授 (至2020.03)

IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), 国际会议IEEE EDTM 技术委员会成员/分会主席，IEEE JEDS 客座编辑(2018)。获得华为优秀合作成果奖(2023)、IEEE EDSSC最佳论文奖(2019)、William Mong纳米科学与技术杰出论文奖(2012)等。指导学生获得IEEE EDSSC最佳学生论文奖(2018)。EDA技术团体标准牵头人。

研究领域为模型驱动的下一代计算系统，涉及新型微纳尺度半导体器件的物理、器件模型和电路模拟方法、电路系统的可靠性、电子设计自动化EDA、神经形态器件和计算系统。目前开展的课题包括先进工艺节点CMOS器件建模、新型逻辑和存储器件、铁电神经形态器件、电路模拟器的动态时间演进算法和模型降阶算法、神经形态电路EDA等。

专著/章节：

[1] Lining Zhang and Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016.

[2] Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.

代表性期刊文章：

[1] W. Dai, Y. Li, Z. Rong, B. Peng, L. Zhang*, R. Wang*, R. Huang, “Statistical compact modeling with artificial neural networks,” to appear IEEE Trans. Computer-aided Design of Integrated Circuits and Systems, 2023

[2] F. Zhang, H. Li, K. Wang, W. Dai, Y. Jiao, F. Ding, Y. Ren, Y. Wu, W. Bu, Q. Huang, L. Zhang*, R. Huang, “A surface potential based full region current model for Si DS-TFET,” to appear IEEE Trans. Electron Devices, 2023

[3] N. Feng, H. Li, B. Peng, F. Zhang, P. Cai, L. Zhang*, R. Wang*, R. Huang, “Metal-ferroelectric- semiconductor tunnel junction: essential physics and design explorations,” IEEE Trans. Electron Devices, vol. 70, no. 6, pp. 3382-3389, June 2023

[4] Q. Hu, C. Gu, Q. Li, S. Zhu, S. Liu, Y. Li, L. Zhang, R. Huang, Y. Wu, “True nonvolatile high-speed DRAM cells using tailored ultrathin IGZO,” Advanced Materials, vol. 35, no. 20, pp. 2210554, May 2023

[5] C. J. Estrada, Z. Ma, L. Zhang, M. Chan, “Threshold voltage model for 2-D FETs with undoped body and gated source,” IEEE Trans. Electron Devices, vol. 70, no. 5, pp. 2575-2580, May 2023

[6] N. Feng, H. Li, L. Zhang*, N. Ji, F. Zhang, X. Zhu, Z. Shang, P. Cai, M. Li, R. Wang, R. Huang, “A physics-based dynamic compact model of ferroelectric tunnel junctions,” IEEE Electron Device Letters, vol. 44, no. 2, pp. 261-264, Feb. 2023

[7] B. Peng, Y. Jiao, H. Zhong, Z. Rong, Z. Wang, Y. Xiao, W. Wong, L. Zhang*, R. Wang*, R. Huang, “Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs,” accepted by Fundamental Research, 2022

[8] L. Zhang*, M. Chan, “Editorial: Hardware Implementation of Spike-based Neuromorphic Computing and its Design Methodologies,” Frontiers in NeuroScience, doi: 10.3389/fnins.2022.1113983

[9] D. Wang, L. Zhou, Y. Xue, P. Ren, L. Zhang, X. Li, X. Liu, J. Wang, B. Wu, Z. Ji* , R. Wang*, K. Cao and R. Huang, “Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition,” IEEE Trans. Electron Devices, vol. 69, no. 12, pp. 6669-6675, Dec. 2022

[10] F. Ding, Y. Jiao, B. Peng, H. Li, W. Liu, L. Zhang*, R. Wang, R. Huang, “Modeling the gradual RESET of phase change memory with confined geometry,” IEEE Trans. Electron Devices, vol. 69, no. 12, pp. 6662-6668, Dec. 2022

[11] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang, L. Zhang*, R. Huang, “A dynamic current hysteresis model for IGZO-TFT,” Solid-State Electronics, vol. 197, pp. 108459, Sept. 2022

[12] Z. Wang, Y. Lv, L. Zhang, L. Liao, C. Jiang, “Strain release enabled bandgap scaling in Ge nanowire and tunnel FET application,” IEEE Trans. Electron Devices, vol. 69, no. 8, pp. 4725-4729, Aug. 2022

[13] Z. Ma, C. Estrada, K. Gong, L. Zhang*, M. Chan, “On-chip integrated high gain complementary MoS2 inverter circuit with exceptional high hole current p-channel field-effect transistors,” Adv. Elec. Mater., doi.org/10.1002/aelm.202200480, July 2022

[14] Y. Jiao, X. Huang, Z. Rong, Z. Ji, R. Wang, L. Zhang*, “Modeling multigate negative capacitance transistors with self-heating effects,” IEEE Trans. Electron Devices, vol. 69, no. 6, pp. 3029-3036, June. 2022  

[15] N. Feng, H. Li, C. Su, L. Zhang*, Q. Huang, R. Wang, R. Huang, “A dynamic compact model for ferroelectric capacitance,” IEEE Electron Device Letters, vol. 43, no. 2, pp. 390-393, Mar. 2022

[16] F. Ding, B. Peng, X. Li, L. Zhang*, R. Wang, Z. Song, R. Huang, “A review of compact modeling for phase change memory,” J. of Semi., vol. 43, no. 2, pp. 023101, Feb. 2022

[17] F. Ding, D. Dong, Y. Chen, X. Lin, L. Zhang*, “Robust simulations of nanoscale phase change memory: dynamics and retention,” Nanomaterials, vol. 11, no. 11, pp. 2945, Nov. 2021

[18] X. Chen, F. Ding, X. Huang, X. Lin, R. Wang, M. Chan, L. Zhang*, R. Huang, “A robust and efficient compact model for phase change memory circuit simulations,” IEEE Trans. Electron Devices, vol. 68, no. 9, pp. 4404-4410, Sept. 2021

[19] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang, Lining Zhang*, Ru Huang, “A dynamic current model for MFIS negative capacitance transistors,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021

[20] Z. Huang, S. Xiong, N. Dong, Lining Zhang, X. Lin, “A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,” IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021

[21] Z. Ma, Lining Zhang*, C. Zhou, M. Chan, “High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,” IEEE Electron Device Letters, vol. 42, no. 3, pp. 343-346, Mar. 2021

[22] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin, Lining Zhang*, M.Chan, “A SPICE model of phase change memory for neuromorphic circuits,” IEEE Access, vol. 8, pp.95278-95287, May 2020

[23] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li, Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,” IEEE Electron Device Letters, vol.41, no.5, pp. 741-744, May 2020

[24] Z. Ahmed, Q. Shi, Z. Ma, Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,” IEEE Electron Device Letters, vol. 41, no. 1, pp. 171-174, Jan. 2020

[25] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin, Lining Zhang*, M. Chan, “A compact phase change memory model with dynamic state variables,” IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020

[26] Lining Zhang*, L. Wang, W. Wu, M. Chan, “Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019

[27] Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019

代表性会议文章：

[1] Qing Shi, Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA

[2] Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA

[3] F. Ding, X. Li, Y. Chen, Z. Song, R. Wang, M. Chan, L. Zhang*, R. Huang, “Compact modeling of phase change memory with parameter extractions,” ESSDERC 2022

[4] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang, L. Zhang*, R. Huang, “A dynamic current hysteresis model for thin-film transistors,” SISPAD 2022

[3] H. Hu, Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]

[4] D. Song, Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]

[5] P. Wu, C. Ma, Lining Zhang, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA

诚招相关方向的博士后进行合作研究。详见学院网站的招聘启事。

1、专业范围：微电子，物理，数学，计算机；

2、乐观、主观能动性、对解决工程问题有好奇心、有团队合作精神