Bachelor of Electronic Science and Technology from Xi 'an Jiaotong University
PhD in electrical and computer Engineering, Hong Kong University of Science and Technology
Visiting Scholar, Department of Physics, McGill University
Research Assistant Professor of Electrical and Computer Engineering, Hong Kong University of Science and Technology (until December 2017)
Associate Professor of Electronic Science and Technology, Shenzhen University (until 2020.03)
His research interests are model-driven next generation computing systems, including physics of novel micro/nano scale semiconductor devices, device models and circuit simulation methods, reliability of circuit systems, electronic design automation EDA, neuromorphic devices and computing systems. Current research topics include advanced process node CMOS device modeling, novel logic and memory devices, neuromorphic devices, dynamic time evolution algorithm and model reduction algorithm for circuit simulator, neuromorphic circuit EDA, etc.
IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), Member/Chair of the IEEE EDTM Technical Committee at the International Conference, Guest Editor of IEEE JEDS (2018). He has won the IEEE EDSSC Best Paper Award (2019) and the William Mong Outstanding Paper Award for Nanoscience and Technology (2012). Mentored students to receive the IEEE EDSSC Best Student Paper Award (2018)
Monograph/Chapter:
[1]Lining Zhangand Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016
[2]Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.
Representative journal articles:
[1] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang,Lining Zhang*, Ru Huang, “A dynamic current model for MFIS negative capacitance transistors,”IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021
[2] Z. Huang, S. Xiong, N. Dong,Lining Zhang, X. Lin, “A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,”IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021
[3] Z. Ma,Lining Zhang*, C. Zhou, M. Chan, “High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,”IEEE Electron Device Letter, vol. 42, no. 3, pp. 343-346, Mar. 2021
[4] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin,Lining Zhang*, M.Chan, “A SPICE model of phase change memory for neuromorphic circuits,”IEEE Access, vol. 8, pp.95278-95287, May 2020
[5] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li,Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,”IEEE Electron Device Letter, vol.41, no.5, pp. 741-744, May 2020
[6] Z. Ahmed, Q. Shi, Z. Ma,Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,”IEEE Electron Device Letter, vol. 41, no. 1, pp. 171-174, Jan. 2020
[7] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin,Lining Zhang*, M. Chan, “A compact phase change memory model with dynamic state variables,”IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020
[8]Lining Zhang*, L. Wang, W. Wu, M. Chan, “Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,”IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019
[9]Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,”IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019
Representative conference articles:
[1] Qing Shi,Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA
[2]Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA
[3] H. Hu,Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]
[4] D. Song,Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]
[5] P. Wu, C. Ma,Lining Zhang*, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA
